By Wai-Kai Chen
That includes countless numbers of illustrations and references, this quantity within the 3rd variation of the Circuits and Filters instruction manual, presents the newest details on analog and VLSI circuits, omitting vast thought and proofs in want of diverse examples all through every one chapter.
The first a part of the textual content specializes in analog built-in circuits, providing updated wisdom on monolithic gadget versions, analog circuit cells, excessive functionality analog circuits, RF verbal exchange circuits, and PLL circuits.
In the second one 1/2 the e-book, recognized individuals supply the most recent findings on VLSI circuits, together with electronic platforms, facts converters, and systolic arrays.
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Additional info for Analog and VLSI Circuits, 3rd Edition (The Circuits and Filters Handbook)
S. Yang, Microelectronic Devices, McGraw-Hill, New York, 1988. 11. B. G. Streetman, Solid State Electronic Devices. , Prentice Hall, Upper Saddle River, NJ, 1990. 12. D. A. Neamen, Semiconductor Physics and Devices, Irwin, 1992. 13. J. D. Cressler and G. Niu, Silicon–Germanium Heterojunction Bipolar Transistor, Artech House, Norwood, MA, 2003. 14. G. Niu, Noise in SiGe HBT RF technology: Physics, modeling and circuit implications, Proceedings of the IEEE, pp. 1583–1597, September 2005. 2 Metal–Oxide–Silicon Field Effect Transistor John Choma, Jr.
In view of the fact that E(Wd) is zero in the undepleted, charge neutral substrate region corresponding to W ! 56 for the Debye length is invoked. 24b. 24c. 84 suggests that the surface potential, w(0), which is effectively the net voltage dropped across the depleted region of the bulk substrate, is 2 qNA Wd2 1 Wd Eo Wd , ¼ VT 2es Db 2 2 w(0) D¼ wo ¼ (1:85) Since the interface potential, wo, and hence the depletion depth, Wd, is controlled externally by the applied gate-to-bulk voltage, Vgb, it is of interest to determine wo as an explicit function of Vgb.
This model does not give accurate results. In the real silicon junction the leakage current is proportional to the thickness of the depletion layer, which is proportional to V1=m. Also the SPICE model of the bipolar transistor assumes that there is no junction breakdown voltage. 5 of Fundamentals of Circuits and Filters. The reverse transit time tR is very important to model the switching property of the lumped bipolar transistor, and it is a strong function of the biasing condition and temperature.
Analog and VLSI Circuits, 3rd Edition (The Circuits and Filters Handbook) by Wai-Kai Chen