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Extra info for 301 Circuits
Exposed ... 2. Process steps required for patterning of silicon dioxide. (d) 23 Fabrication of MOSFETs Chemical etch (HF acid) or dry etch (plasma) Hardened photoresist SiO 2 (Oxide) . A. ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Si -substrate (e) Hardened photoresist SiO2 (Oxide) ..... E'! 2. Process steps required for patterning of silicon dioxide (continued). starts with the thermal oxidation of the silicon surface, by which an oxide layer of about 1 m thickness, for example, is created on the substrate (Fig.
4(b) and Fig. 4(c). Here, the field oxide is selectively etched away to expose the silicon surface on which the MOS transistor will be created. Although the technique is relatively straightforward, it also has some drawbacks. The most significant disadvantage is that the thickness of the field oxide leads to rather large oxide steps at the boundaries between active areas and isolation (field) regions. When polysilicon and metal layers are deposited over such boundaries in subsequent process steps, the sheer height difference at the boundary can cause cracking of deposited layers, leading to chip failure.
11 illustrate the significant milestones that occur during the fabrication process of a CMOS inverter. The main process steps for the fabrication of a CMOS inverter are also illustrated in Plate 3, Plate 4 and Plate 5. The cross-sectional figures presented here were generated using the DIOS' multi-dimensional process simulator and PROSITTm 3-D structural modeling tool, by ISE Integrated Systems EngineeringAG, Zurich, Switzerland. 6. Following the creation of the n-well region, a thick field oxide is grown in the areas surrounding the transistor's active regions, and a thin gate oxide is grown on top of the active regions.